“Hard X-ray Detection Using a Single 100 nm Diameter Nanowire” by Markus Osterhoff

Wallentin2014

• Hard X-ray Detection Using a Single 100 nm Diameter Nanowire
• J. Wallentin M. Osterhoff R.N. Wilke K.M. Persson L.E. Wernersson M. Sprung T. Salditt
• doi:10.1021/nl5040545
• Nano Letters, 14 (12), 7071–7076

• Submicron sized sensors could allow higher resolution in X-ray imaging and diffraction measurements, which are ubiquitous for materials science and medicine. We present electrical measurements of a single 100 nm diameter InP nanowire transistor exposed to hard X-rays. The X-ray induced conductance is over 5 orders of magnitude larger than expected from reported data for X-ray absorption and carrier lifetimes. Time-resolved measurements show very long characteristic lifetimes on the order of seconds, tentatively attributed to long-lived traps, which give a strong amplification effect. As a proof of concept, we use the nanowire to directly image an X-ray nanofocus with submicron resolution.

• Nanowires, X-rays, detector, Ⅲ-Ⅴ
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